Doping, PN junctions, MOSFETs & chip fabrication — how semiconductor devices are built and how they work at the physical level.
Inspect the diamond-cubic silicon unit cell, its tetrahedral bonds and a tagged atom's four nearest neighbors.
Dope silicon with donors or acceptors and read the carrier concentrations, conductivity and drift current of a test bar.
Watch diffusion uncover fixed dopant charge and build an internal field as p-type and n-type regions are joined.
Turn a bias supply across a PN junction and watch depletion width, barrier height, diode current and capacitance change.
Charge the gate of an n-channel MOSFET and watch an inversion channel form, pinch off and set the drain current.
Step a wafer through coating, exposure, development, etching and stripping in a positive-resist lithography station.
Build one planar nMOS transistor layer by layer, from isolation and gate oxide to implant, anneal, contacts and metal.
Explode the IC wiring stack, trace one connected net through vias and metal layers, and read its resistance, capacitance and RC delay.